1. The studies of photoelectrical and optical properties of amorphous and nanocrystalline thin films semiconductor using the Steady-State Photocarrier Grating (SSPG) technique and sepectrophotometry. This includes a specific study of the minority carrier properties and the optical constants. The experimental studies are accompanied with the implementation of different theoretical approaches. Furthermore, the study of electrical properties of ZnO nanowires, nanorods and nanosheets fabricated as heterojunction diodes, is another interest.
2. The study of electrical properties of semiconductors, via the transient photoconductivity (TPC) and the modulated photoconductivity (MPC) on nanocrystlline and amorphous semiconductors samples is conducted where the numerical methods of Fourier and Laplace transforms are used to determine the density of states in the mobility gap.
3. The analysis of noise in semiconductor devices is also conducted. The analysis of generation-recombination noise in amorphous semiconductor devices based on multipletrapping-state regime using the equivalent circuit model of Chaplin is the main theme of this work. The spectral noise is calculated and compared to the theoretical results of other models. Monte-Carlo simulation programs are also developed to calculate the spectral noise and these results are compared to the above-mentioned theoretical results and experimental data.
4. Research work in nuclear physics involving heavy ion collisions is of one of my interests. The first part of this research deals with the analysis of elastic scattering of heavy nuclei at low energies. While the second part involves the incomplete fusion, and transfer reactions of different heavy nuclei at various energies. Different numerical models are developed and employed in this theoretical work.
5. The theoretical studies of the transition metal ions as impurities in the crystalline group III-V
semiconductors are the main theme of my research work in solid state physics. The analytical method of unitary transformation followed by energy minimization is used to study the E e Jahn-Teller system in the strong coupling limit. The inversion splitting and reduction factors are obtained analytically. The Schrödinger equation is solved for this complex system, and the perturbation theory is used. This work also involves modeling the transition metal ion V3+ as an impurity in the GaAs, GaP, and InP semiconductors. In particular, the analysis of the structure of the zero-phonon lines of transitions within V3+ ions, in the above-mentioned hosts, under the effects of spinorbit coupling, uniaxial stress and external magnetic field which are accompanied by Jahn-Teller effects, are studied.
1. “Analytical solution of phototransport problem under the presence of a small- signal photocurrent based on method of weighted residuals”.
Results in Physics, 17, 103079 (2020)
R.I. Badran
https://doi.org/10.1016/j.rinp.2020.103079
2. “Electrical properties of Ga-doped ZnO nanowires/Si heterojunction diode “.
Materials Express (2020), 10, 794-801 (2020)
Y. Al-Hadeethi, R.I. Badran, A. Umar, S.H. Al-Heniti, B.M. Raffah, and S. Al-Zahrani.
https://doi.org/10.1166/mex.2020.1725
3. “ZnO Nanowalls/Si Substrate Heterojunction Assembly: Morphological, Optical and Electrical Properties”.
Journal of Nanoelectronics and Optoelectronics, 5, 586-591 (2020).
Y. Al-Hadeethi, A .Umar, S.H. Al-Heniti, B.M. Raffah, and R.I, Badran,
https://doi.org/10.1166/jno.2020.2786
4. “Temperature-dependent heterojunction device characteristics of n-ZnO nanorods/p-Si substrate assembly”.
Materials Express 10, 29-36. (2020).
R.I. Badran, Y. Al-Hadeethi, A. Umar, S.H. Al-Heniti, B. M. Raffah, S. Ansari, and A. Jilani.
DOI: https://doi.org/10.1166/mex.2020.1595
5. “Growth of n-Ga doped ZnO nanowires interconnected with disks over p-Si substrate and their heterojunction diode application”.
Materials Express 10, 21-28 (2020).
Y. Al-Hadeethi, R.I. Badran, A .Umar, S.H. Al-Heniti, B.M. Raffah, and A.M. Alharbi.
DOI: https://doi.org/10.1166/mex.2020.1594
6. "Fabrication and Temperature Dependent Electrical Characterization of n-ZnO Nanowires/p-Si Substrate Heterojunction Diodes".
Journal of Nanoelectronics and Optoelectronics 12, pp. 1162–1166, (2017)
H. Algarni, R. I. Badran, M. A. Khan, F.J. Hassen, S. H. Kim, and A. Umar.
7. "Fabrication of ZnO Nanorods Based p–n Heterojunction Diodes and Their Electrical
Behavior with Temperature"
Journal of Nanoelectronics and Optoelectronics 12, pp. 731–735, (2017)
S. H. Kim, R. I. Badran, Ahmad Umar
DOI:https://doi:10.1166/jno.2017.2134
8. "Analytical Solution of Steady-State Transport Equation for Photocarriers in CdTe Photovoltaics Under Bias-Dependent Photoluminescence"
Journal of Nanoelectronics and Optoelectronics 12, pp. 1–7, (2017)
A. S. Issa, Ahmad Umar, and R. I. Badran
DOI:http://doi:10.1166/jno.2017.2093
9. "Analysis of elastic scattering of 4He+ 58Ni and 4He+ 60Ni using semiclassical models"
AIP Conference Proceedings 1809, 020007 (2017)
R. I. Badran and A. I. Istaiti
DOI: http://dx.doi.org/10.1063/1.4975422
10. "The use of a combined parametrised model for analysis of elastic scattering processes of 28Si by different targets of 232Th, 209Bi and 197Au at laboratory energy of 179MeV".
AIP Conference Proceedings 1809 (1), 020008 (2017)
R. I. Badran
DOI: http://dx.doi.org/10.1063/1.4975423
11. "Fabrication of Heterojunction Diode Based on n-ZnO Nanowires /p-Si Substrate: Temperature Dependent Transport Characteristics"
Journal of Nanoscience and Nanotechnology, 17, 581 (2017)
R. I. Badran and A. Umar
DOI: https://doi.org/10.1166/jnn.2017.12436
12. "An Analysis of Heavy-Ion Elastic Scattering Processes Using Numerical Model Based on the Partial-Wave Parametrised S-Matrix with Regge Pole Factor"
Brazilian Journal of Physics, 46, 341-354 (2016).
R. I. Badran and I. H. Al-Lehyani
DOI: http://dx.doi.org /10.1007/s13538-016-0418-3
13. "Temperature-Dependent Electrical Properties of Sn-Doped ZnO Nanowires"
Science of Advanced Materials, 7, (2015) 2684-2691
S. H. Al-Heniti, R. I. Badran and A. Umar
DOI:http://dx.doi.org/10.1166/sam.2015.2708
**[This paper is highlighted on the cover library page of Science of Advanced Materials Journal.(See the link http://www.aspbs.com/sam/sam712.pdf) ]
14. "Regge Pole Analysis of Elastic Scattering of α Particles by Even Isotopes of Ni Target at Incident Energies Above Coulomb Barrier"
International Journal of Modern Physics E, 24, 1550082-23 (2015)
R. I. Badran, A. I. Istaiti, W. N. Mashaqbeh, I. H. Al-Lehyani
DOI:http://dx.doi.org/10.1142/S0218301315500822
15. "Synthesis and Properties of Aligned ZnO Nanorods on Si Substrate and Their Applications for p-Si/n-ZnO Heterojunction Diode"
Journal of Nanoelectronics and Optoelectronics, 10, 688–693 (2015)
S. H. Kim, A. Umar, R. I. Badran, H. Algarni
DOI: http://dx.doi.org/10.1166/jno.2015.1721
16. "Fabrication and Characterization of n-ZnO HexagonalNanorods/p-Si Heterojunction Diodes:Temperature-Dependant Electrical Characteristics"
Journal of Nanotechnology and Nanoscience, 15, 4969-4975 (2015)
A. Umar, R. I. Badran, A. Al-Hajry, S. Al-Heniti
DOI:http://dx.doi.org/10.1166/jnn.2015.9892
17. "Nanocrystalline and amorphous silicon as competing candidates for PV applications”
Journal of Material Science and Technology Research, 1, (2014)
R. I. Badran
DOI:http://dx.doi.org/10.15377/2410-4701.2014.01.01.4
18. Growth and Properties of Sn-Doped ZnO Nanowires for Heterojunction Diode Application
Science of Advanced Materials 6, 1993-2000 (2014)
S. H. Al-Heniti, R. I. Badran, A. Umar, and H. M. Zaki
DOI:http://dx.doi.org/10.1166/sam.2014.2126
19. Synthesis and Characterization of Iron Oxide Nanoparticles for Phenyl Hydrazine Sensor Applications
Sensor Letters 12 (2014) 97-101
S. W. Hwang, A. Umar, G. N. Dar, S. H. Kim, and R. I. Badran
DOI:http://dx.doi.org/10.1166/sl.2014.3224
20. Exploring Diffractive Features of Elastic Scattering of 6Li on Different Nuclei at
Different Energies".
Canadian Journal of Physics, 91 (2013) 355-364
R. I. Badran and D. Al-Masri
DOI:http://dx.doi.org/10.1139/cjp-2012-0466
21. Analysis of Diffractive Features in Elastic Scattering of 7Li by Different Target Nuclei at Different Energies. AIP Conference Proceedings 1569, 81 (2013)
R. I. Badran and Dana Al-Masri
DOI:http://dx.doi.org/10.1063/1.4849233
22. "n-ZnO Based Nanostructure/p-Silicon Substrate Based Efficient p-n Heterojunction Diode"
Science of Advanced Materials, 5, (2013) 301-307
S. Al-Heniti, A. Umar, R. I. Badran, H. M. Zaki, A. Al-Hajry
DOI:http://dx.doi.org/10.1166/sam.2013.1526
23. "Electrical properties of solution processed p-SnS nanosheet/n-TiO2 heterostructure assembly"
Applied Physics Letters 103, (2013) 101602
A. Umar, M. S. Akhtar, R. I. Badran, M. Abaker, S. H. Kim, A. Al-Hajry, S. Baskoutas
DOI:http://dx.doi.org/10.1063/1.4819838
24. "Temperature Dependent Structural and Electrical Properties of ZnO Nanowire Networks"
Journal of Nanotechnology and Nanoscience, 12 (2012), 68-74.
S. Al-Heniti, R. I. Badran, A. Umar, A. Al-Ghamdi, S. H. Kim, F. Al-Marzouki, A. Al-
Hajry, S. A. Al-Sayari, and T. Al-Harbi
DOI:http://dx.doi.org/10.1166/jnn.2011.5117
25. "The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique ".
Acta Physica Polonica A, 122 (2012) 576-581.
R. I. Badran, H. Al-Amodi, S.Yaghmour , S. Shaklan , R. Bruggemann, X. Han and S. Xiong
DOI:http://przyrbwn.icm.edu.pl/APP/PDF/122/a122z3p38.pdf
26. “The effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique”.
The Arabian Journal for Science and Engineering (AJSE), (2012) 183-195
R. I. Badran.
DOI:http://dx.doi.org/10.1007/s13369-011-0147-4
27. "Electrical Properties of p-Si/ n-ZnO Nanowires Heterojunction Devices”,
Advanced Materials Letters, 4 (2010) 24-28
S. Alheniti, R. I. Badran, A. A. Al-Ghamdi, F. Al-Aqel
DOI:http://dx.doi.org/10.1166/asl.2011.1196
28. "Synthesis and characterization of hexagonal zinc oxide nanorods on silicon for the fabrication of p-Si/ n-ZnO heterojunction devices”.
Journal of alloys and compounds 508 (2010) 375-379
R. I. Badran, A. Umar, S. Alheniti, T. Al-Harbi
DOI:http://dx.doi.org/10.1016/jallcom.2010.08.048
29. “Strong absorption analysis of the elastic scattering of light heavy ions using McIntyr and Frahn-Venter models”.
International Journal of Modern Physics E 19 (2010) 2199.
R. I. Badran, H. Badehdah, R. Khalidi and M. Arafah
DOI:http://dx.doi.org/10.1142/S0218301310016600
30. "Monte-Carlo Simulation of the space charge limited time of flight photocurrent in
a-Si:H p-i-n photo-cell”.
Submitted to J. Phys.: Conden. Mat. (2011)
N. Ouhbab, A. Merazga, M. Lerda, R. I. Badran
31. "Nanocrystalline and amorphous silicon as competing candidates for PV applications”
Journal of Material Science and Technology Research. (2014)
R. I. Badran
DOI:http://www.avantipublishers.com/editorial-board-member-jmstr/
32. "Phenomenological analysis of elastic scattering reactions using different models”.
Brazilian Journal of Physics, 39, (2009) 684-693.
R. I. Badran and H. Badehdah
DOI:http://dx.doi.org/10.1590/S0103-97332009000600012
33. "Minority carrier properties of microcrystalline Ge:H thin films “.
Journal of Optoelectronics and Advanced Materials 11(2009).
R. I. Badran, R. Brüggemann and R. Carius.
34. "A study of optical properties of hydrogenated microcrystalline silicon films prepared
by plasma enhanced chemical vapor deposition technique at different conditions of
excited power and pressure”.
Vacuum 83 (2009) 1023-1030.
R. I. Badran, F. S. Al-Hazmi, S. Al-Heniti, A. Al-Ghamdi, J. Li and S. Xiong
DOI:http://dx.doi.org/10.1016/j.vacuum.2009.01.009
35. "The influence of change in silane concentration and substrate temperature on
optical properties of hydrogenated microcrystalline silicon films”.
Journal of Optoelectronics and Advanced Materials, 5 (2009) 635-643
R. I. Badran, S. Al-Heniti, F. S. Al-Hazmi, A. Al-Ghamdi, J. Li and S. Xiong
DOI:http://dx.doi.org/10.27497/35400016187248.0250
36. "A study of field dependent steady-state photocarrier grating measurements for
microcrystalline semiconductors using different theoretical methods”.
Journal of Optoelectronics and Advanced Materials 10, 1 (2008) pp. 174-184.
R. I. Badran
DOI:http://dx.doi/org/10.27497/35400016187248.0250
37. “Estimations of carrier mobility and trapped-carrier density of states for
microcrystalline semiconductors from analysis of field dependent steady-state photocarrier grating technique’. AIP, first international conference on nanotechnology and its applications, AIP, vol. 929 (2007) pp. 201-205
R. I. Badran
DOI:http://dx.doi.org/10.1063/1.2776715
38. "Relation between dark and photoelectronic properties of microcrystalline silicon”.
Journal of Optoelectronics and Advanced Materials, 9, 2 (2007).
R. Bruggemann, R. I. Badran, and S. Xiong
DOI:http://dx.doi.org/10.27497/35400014685961.0290
39. "Analysis of field dependent steady-state photocarrier measurements for
polymorphous and microcrystalline semiconductors".
Journal Materials Science: Materials in Electronics 18, 4, 405-414 (2007).
R. I. Badran
الخبرة في المسار التعليمي:
- سبتمبر 1979-سبتمبر 1982: مساعد باحث وتدريس –جامعة البصرة
- اوكتوبر 1982 – مارس 1986:مساعد تدريس اثناء منحة دراسة الماجستير-جامعة الكويت
- مارس 1986- اغسطس 1987: مساعد محاضر وباحث- قسم الفيزياء-جامعة الكويت
- اوكتوبر 1990- حزيرن 1991 : مساعد تدريس –جامعة نوتنجهام
- يناير 1993- اغسطس 1993: محاضرغير متفرغ - قسم الفيزياء – الجامعة الاردنية
- سبتمبر 1993- اعسطس 1995:استاذ مساعد – كلية العلوم – جامعة البنرا (جامعة البنات الاردنية سابقاُ)
- سبتمبر 1995- اوكتوبر 2003: اسناذ مساعد في قسم الفيزياء – الجامعة الهاشمية
- حزيران 1999- سبتمير 1999: مساعد باحث زائر- مركز EPI–جامعة دندي- اسكتلندة- المملكة المتحدة
- حزيران 2000- سبتمير 2000: مساعد باحث زائر- مركز EPI–جامعة دندي- اسكتلندة- المملكة المتحدة
- حزيران 2001- سبتمير 2001: مساعد باحث زائر- مركز EPI–جامعة دندي- اسكتلندة- المملكة المتحدة
- حزيران 2003- سبتمير 2003: مساعد باحث زائر- معهد يوليش للابحاث–يوليش- المانيا-ومساعد باحث زائر في جامعة اولدينبيرك - المانيا
- نوفمبر 2003 – اغسطس 2006: أستاذ مشارك – قسم الفيزياء – كلية العلوم – الجامعة الهاشمية
- سبتمبر 2006 – اغسطس 2010: أستاذ مشارك – قسم الفيزياء – كلية العلوم – جامعة الملك عبدالعزيز- المملكة العربية السعودية
- سبتمير 2010- نوفمير 2010: أستاذ مشارك – قسم الفيزياء – كلية العلوم – الجامعة الهاشمية
- نوفمبر 2010 التقدم بطلب الترقية للاستاذية –الجامعة الهاشمية
- اوكتوبر 2011 تم الحصول على الترقية بالاقدمية للاستاذية
- اوكتوبر 2011- اغسطس 2012: استاذ دكتور –كلية هندسة -المصادر الطبيعية- الجامعة الاردنية الالمانية
- اوكتوبر 2011- الان: استاذ دكتور –قسم الفيزياء – كلية العلوم - الجامعة الهاشمية
- سبتمبر 2017- سبنمبر 2020: عميد كلية العلوم – الجامعة الهاشمية
- سبتمبر 2021 : الترقية الثانية بالافدمية للاستاذية (بناءا على البجوث المميزة خلال الاربع سنوات السابقة)